Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Huang, HY | en_US |
dc.contributor.author | Shu, CK | en_US |
dc.contributor.author | Lin, WC | en_US |
dc.contributor.author | Liao, KC | en_US |
dc.contributor.author | Chuang, CH | en_US |
dc.contributor.author | Lee, MC | en_US |
dc.contributor.author | Chen, WH | en_US |
dc.contributor.author | Chen, WK | en_US |
dc.contributor.author | Lee, YY | en_US |
dc.date.accessioned | 2014-12-08T15:27:01Z | - |
dc.date.available | 2014-12-08T15:27:01Z | - |
dc.date.issued | 2000 | en_US |
dc.identifier.isbn | 4-900526-13-4 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/19233 | - |
dc.description.abstract | Time-resolved photoluminescence spectra were used to characterize isoelectronically doped GaN:In films. Our results indicate that the recombination lifetime of donor-bound-exciton transition of pure GaN exhibits strong dependence on temperature. When In is doped into GaN, the recombination lifetime decreases sharply from 68 ps to 30 ps, irregardless of measured temperature and In doping concentration. The cause for this appearance is not clear at present. It might be related to the isoelectronic In impurity itself in GaN, which creates shallow energy levels that predominate the recombination process. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | GaN | en_US |
dc.subject | recombination life time | en_US |
dc.subject | isoelectronic doping | en_US |
dc.title | Effects in carrier dynamics of Isolectronic In doped in GaN films grown by metalorganic vapor phase epitaxy | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS | en_US |
dc.citation.volume | 1 | en_US |
dc.citation.spage | 610 | en_US |
dc.citation.epage | 613 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000171608500155 | - |
Appears in Collections: | Conferences Paper |