MOLECULAR-BEAM EPITAXY REGROWTH USING A THIN IN LAYER FOR SURFACE PASSIVATION

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	PENG, CK	en_US
dc.contributor.author	TU, SL	en_US
dc.contributor.author	CHEN, SS	en_US
dc.contributor.author	LIN, CC	en_US
dc.date.accessioned	2014-12-08T15:03:23Z	-
dc.date.available	2014-12-08T15:03:23Z	-
dc.date.issued	1995-05-08	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.113163	en_US
dc.identifier.uri	http://hdl.handle.net/11536/1924	-
dc.language.iso	en_US	en_US
dc.title	MOLECULAR-BEAM EPITAXY REGROWTH USING A THIN IN LAYER FOR SURFACE PASSIVATION	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.113163	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	66	en_US
dc.citation.issue	19	en_US
dc.citation.spage	2549	en_US
dc.citation.epage	2551	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:A1995QX02600034	-
dc.citation.woscount	7	-
顯示於類別：	期刊論文