標題: The performance limiting factors as RF MOSFETs scaling down
作者: Wu, YH
Chin, A
Liang, CS
Wu, CC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2000
摘要: The measured RF performance of 0.5, 0.25, and 0.18 mum MOSFETs gradually saturates as scaling down, which can be explained by the derived analytical equation and simulation. The overlap C-gd and non-quasi-static effect are the main factors but scales much slower than L-g.
URI: http://hdl.handle.net/11536/19272
http://dx.doi.org/10.1109/RFIC.2000.854437
ISBN: 0-7803-6281-0
DOI: 10.1109/RFIC.2000.854437
期刊: 2000 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS
起始頁: 151
結束頁: 154
Appears in Collections:Conferences Paper


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