High quality La2O3 and Al2O3 gate dielectrics with equivalent oxide thickness 5-10 angstrom

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DC Field	Value	Language
dc.contributor.author	Chin, A	en_US
dc.contributor.author	Wu, YH	en_US
dc.contributor.author	Chen, SB	en_US
dc.contributor.author	Liao, CC	en_US
dc.contributor.author	Chen, WJ	en_US
dc.date.accessioned	2014-12-08T15:27:03Z	-
dc.date.available	2014-12-08T15:27:03Z	-
dc.date.issued	2000	en_US
dc.identifier.isbn	0-7803-6306-X	en_US
dc.identifier.uri	http://hdl.handle.net/11536/19275	-
dc.identifier.uri	http://dx.doi.org/10.1109/VLSIT.2000.852751	en_US
dc.description.abstract	High quality La2O3 and Al2O3 are fabricated with EOT of 4.8 and 9.6 Angstrom, leakage current of 0.06 and 0.4A/cm(2) and D-it of both 3x10(10) eV(-1)/cm(2), respectively. The high K is further evidenced from high MOSFET's I-d and g(m) with low I-off Good SILC and Q(BD) are obtained and comparable with. SiO2. The low EOT is due to the high thermodynamic stability in contact with Si and stable after H-2 annealing up to 550 degrees C.	en_US
dc.language.iso	en_US	en_US
dc.title	High quality La2O3 and Al2O3 gate dielectrics with equivalent oxide thickness 5-10 angstrom	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1109/VLSIT.2000.852751	en_US
dc.identifier.journal	2000 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS	en_US
dc.citation.spage	16	en_US
dc.citation.epage	17	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000088359300006	-
Appears in Collections:	Conferences Paper

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