High quality La2O3 and Al2O3 gate dielectrics with equivalent oxide thickness 5-10 angstrom

標題:	High quality La2O3 and Al2O3 gate dielectrics with equivalent oxide thickness 5-10 angstrom
作者:	Chin, A Wu, YH Chen, SB Liao, CC Chen, WJ 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	2000
摘要:	High quality La2O3 and Al2O3 are fabricated with EOT of 4.8 and 9.6 Angstrom, leakage current of 0.06 and 0.4A/cm(2) and D-it of both 3x10(10) eV(-1)/cm(2), respectively. The high K is further evidenced from high MOSFET's I-d and g(m) with low I-off Good SILC and Q(BD) are obtained and comparable with. SiO2. The low EOT is due to the high thermodynamic stability in contact with Si and stable after H-2 annealing up to 550 degrees C.
URI:	http://hdl.handle.net/11536/19275 http://dx.doi.org/10.1109/VLSIT.2000.852751
ISBN:	0-7803-6306-X
DOI:	10.1109/VLSIT.2000.852751
期刊:	2000 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS
起始頁:	16
結束頁:	17
顯示於類別：	會議論文

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