標題: | DLTS characterization of InAs self-assembled quantum dots |
作者: | Ilchenko, VV Lin, SD Lee, CP Tretyak, OV 交大名義發表 National Chiao Tung University |
公開日期: | 2000 |
摘要: | Deep level capacitance transient spectroscopy was used to obtain the energy level and the capture characteristics of InAs self-assembled quantum dots embedded in GaAs. A specially designed structure was used for the DLTS measurement for enhanced resolution. This structure allows us to detect capacitance relaxation signal from a single layer of quantum dots and to separate this signal from those of the DX centers inside the structure. The DLTS spectra with different filling pulses and different rate windows provide clear information on the energy level and the capture characteristics of the quantum dots. |
URI: | http://hdl.handle.net/11536/19277 http://dx.doi.org/10.1109/ISCS.2000.947126 |
ISBN: | 0-7803-6258-6 |
DOI: | 10.1109/ISCS.2000.947126 |
期刊: | 2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS |
起始頁: | 43 |
結束頁: | 48 |
顯示於類別: | 會議論文 |