DLTS characterization of InAs self-assembled quantum dots

doi:10.1109/ISCS.2000.947126

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DC Field	Value	Language
dc.contributor.author	Ilchenko, VV	en_US
dc.contributor.author	Lin, SD	en_US
dc.contributor.author	Lee, CP	en_US
dc.contributor.author	Tretyak, OV	en_US
dc.date.accessioned	2014-12-08T15:27:04Z	-
dc.date.available	2014-12-08T15:27:04Z	-
dc.date.issued	2000	en_US
dc.identifier.isbn	0-7803-6258-6	en_US
dc.identifier.uri	http://hdl.handle.net/11536/19277	-
dc.identifier.uri	http://dx.doi.org/10.1109/ISCS.2000.947126	en_US
dc.description.abstract	Deep level capacitance transient spectroscopy was used to obtain the energy level and the capture characteristics of InAs self-assembled quantum dots embedded in GaAs. A specially designed structure was used for the DLTS measurement for enhanced resolution. This structure allows us to detect capacitance relaxation signal from a single layer of quantum dots and to separate this signal from those of the DX centers inside the structure. The DLTS spectra with different filling pulses and different rate windows provide clear information on the energy level and the capture characteristics of the quantum dots.	en_US
dc.language.iso	en_US	en_US
dc.title	DLTS characterization of InAs self-assembled quantum dots	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1109/ISCS.2000.947126	en_US
dc.identifier.journal	2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS	en_US
dc.citation.spage	43	en_US
dc.citation.epage	48	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.identifier.wosnumber	WOS:000172146400008	-
Appears in Collections:	Conferences Paper

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