Subsonic solutions of hydrodynamic model for semiconductors

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DC Field	Value	Language
dc.contributor.author	Yeh, LM	en_US
dc.date.accessioned	2014-12-08T15:01:19Z	-
dc.date.available	2014-12-08T15:01:19Z	-
dc.date.issued	1997-11-10	en_US
dc.identifier.issn	0170-4214	en_US
dc.identifier.uri	http://hdl.handle.net/11536/192	-
dc.description.abstract	This paper is concerned with the existence and uniqueness of the steady-state solution of hydrodynamic model for semiconductor devices. Boundary conditions are prescribed by vorticity on inflow boundary as well as by electron density, temperature, and normal component of electron velocity on whole boundary. If the ambient temperature is large, and if both vorticity on inflow boundary and the variation of density on boundary are small, a unique subsonic solution exists. (C) 1997 by B.G. Teubner Stuttgart-John Wiley & Sons Ltd.	en_US
dc.language.iso	en_US	en_US
dc.title	Subsonic solutions of hydrodynamic model for semiconductors	en_US
dc.type	Article	en_US
dc.identifier.journal	MATHEMATICAL METHODS IN THE APPLIED SCIENCES	en_US
dc.citation.volume	20	en_US
dc.citation.issue	16	en_US
dc.citation.spage	1389	en_US
dc.citation.epage	1410	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	應用數學系	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Department of Applied Mathematics	en_US
dc.identifier.wosnumber	WOS:A1997YA18700003	-
dc.citation.woscount	13	-
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