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dc.contributor.authorSheen, CSen_US
dc.contributor.authorChen, CNen_US
dc.date.accessioned2014-12-08T15:27:08Z-
dc.date.available2014-12-08T15:27:08Z-
dc.date.issued1999en_US
dc.identifier.isbn0-7803-5277-7en_US
dc.identifier.issn1091-5281en_US
dc.identifier.urihttp://hdl.handle.net/11536/19374-
dc.description.abstractA CMOS compatible thermal-type microsensor was fabricated with large sensitive area and ultra-low solid thermal-conductance. To reach high performance, a floating circular membrane with diameter, 460 mu m and lead length, 393 mu m, was formed after anisotropic etching the silicon substrate. The large membrane is well supported with four curved leads, which greatly release the residual stress. The highly sensitivity is reached by the extremely low solid conductance (10(-6) W/C), which is lower than the published data; the large active area give better response than other works. Output voltage versus frequency was measured and thermal conductance was characterized by DC method.en_US
dc.language.isoen_USen_US
dc.titleA highly sensitive CMOS compatible thermal-type microsensoren_US
dc.typeProceedings Paperen_US
dc.identifier.journalIMTC/99: PROCEEDINGS OF THE 16TH IEEE INSTRUMENTATION AND MEASUREMENT TECHNOLOGY CONFERENCE, VOLS. 1-3en_US
dc.citation.spage464en_US
dc.citation.epage467en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000081629700086-
Appears in Collections:Conferences Paper