A NEW ANALYTICAL EXPRESSION FOR THE INTERFACE INDEX OF METAL SCHOTTKY CONTACTS ON SEMICONDUCTORS

doi:10.1016/0038-1101(95)98675-S

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	SZE, JJ	en_US
dc.contributor.author	CHENG, HC	en_US
dc.date.accessioned	2014-12-08T15:03:24Z	-
dc.date.available	2014-12-08T15:03:24Z	-
dc.date.issued	1995-05-01	en_US
dc.identifier.issn	0038-1101	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/0038-1101(95)98675-S	en_US
dc.identifier.uri	http://hdl.handle.net/11536/1937	-
dc.description.abstract	By reconsidering the effect of the penetration depth of the interface states, a new analytical expression of the interface index has been achieved to successfully explain the role of the semiconductor ionicity in the behavior of metal-Schottky contacts on semiconductors. The derived interface indices not only fit quite well with the previous experimental data but also exhibit a sharp transition from the Bardeen limit to the Schottky limit for semiconductor ionicity around 0.8, which agrees well with the experiment reports.	en_US
dc.language.iso	en_US	en_US
dc.title	A NEW ANALYTICAL EXPRESSION FOR THE INTERFACE INDEX OF METAL SCHOTTKY CONTACTS ON SEMICONDUCTORS	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/0038-1101(95)98675-S	en_US
dc.identifier.journal	SOLID-STATE ELECTRONICS	en_US
dc.citation.volume	38	en_US
dc.citation.issue	5	en_US
dc.citation.spage	1059	en_US
dc.citation.epage	1063	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1995QV34100017	-
dc.citation.woscount	0	-
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