標題: | Al Schottky contact on p-GaSe |
作者: | Huang, Wen-Chang Su, Shui-Hsiang Hsu, Yu-Kuei Wang, Chih-Chia Chang, Chen-Shiung 光電工程學系 Department of Photonics |
關鍵字: | GaSe;Schottky contact;barrier height |
公開日期: | 1-十月-2006 |
摘要: | A new Schottky diode, Al/p-GaSe, was presented in this study. It shows an effective barrier height of 0.96 eV with an ideality factor of 1.24 over five decades and a reverse leakage current density of 4.12 x 10(-7) A/cm(2) at -2 V after rapid thermal annealing at 400 degrees C for 30 s. The generation-recombination effect of the Schottky diode was decreased as the annealing temperature was increased. The formation of Al1.33Se2 was observed by X-ray diffraction analysis after the diode was annealed at 400 degrees C for 30 s. Owing to the grains' growth, the surface morphology of the 400 degrees C-annealed diode was rougher than that of the unannealed diode, which was observed both by the AFM and the SEM analysis. (c) 2006 Elsevier Ltd. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.spmi.2006.07.004 http://hdl.handle.net/11536/11711 |
ISSN: | 0749-6036 |
DOI: | 10.1016/j.spmi.2006.07.004 |
期刊: | SUPERLATTICES AND MICROSTRUCTURES |
Volume: | 40 |
Issue: | 4-6 |
起始頁: | 644 |
結束頁: | 650 |
顯示於類別: | 會議論文 |