1. You are Here：

Full metadata record
DC FieldValueLanguage
dc.contributor.authorPan, CLen_US
dc.date.accessioned2014-12-08T15:27:12Z-
dc.date.available2014-12-08T15:27:12Z-
dc.date.issued1999en_US
dc.identifier.isbn0-7803-5807-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/19434-
dc.description.abstractGaAs bombarded with; arsenic ions at multiple dosages with various implantation energies were used to fabricate ultrafast photoconductive switches with picosecond response and bandwidth exceeding 500 MHz.en_US
dc.language.isoen_USen_US
dc.subjectarsenic-ion-implanted GaAsen_US
dc.subjectmultiple dosageen_US
dc.subjectphotoconductive switchen_US
dc.subjectpicoseconden_US
dc.subjectmillimeter waveen_US
dc.titleMulti-energy arsenic-ion-implanted GaAs photoconductive switches for ultrafast and millimeter wave applicationsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal1999 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE, PROCEEDINGS, VOLS 1 & 2: WIRELESS AND PHOTONICS BUILDING THE GLOBAL INFOWAYSen_US
dc.citation.spage367en_US
dc.citation.epage368en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000089938100084-
Appears in Collections:Conferences Paper


Related Contents
Loading...