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dc.contributor.authorYeh, CFen_US
dc.contributor.authorChen, DCen_US
dc.contributor.authorLu, CYen_US
dc.contributor.authorLiu, Cen_US
dc.contributor.authorLee, STen_US
dc.contributor.authorLiu, CHen_US
dc.contributor.authorChen, TJen_US
dc.date.accessioned2014-12-08T15:27:13Z-
dc.date.available2014-12-08T15:27:13Z-
dc.date.issued1998en_US
dc.identifier.isbn0-7803-4774-9en_US
dc.identifier.urihttp://hdl.handle.net/11536/19454-
dc.identifier.urihttp://dx.doi.org/10.1109/IEDM.1998.746352en_US
dc.description.abstractLow temperature (similar to 300 degrees C) N2O plasma annealing for liquid-phase deposited (LPD) gate oxide has been proposed for the first time. Physicochemical and electrical characterizations show that the N2O-treated LPD-SiO2 improves breakdown field, interface state density, and Si-rich phenomenon. This novel technology has been also successfully applied to LTP poly-Si TFT's, which reveal excellent characteristics and reliability. It is believed that the N2O plasma post-treatment not only improves the oxide quality, but also passivates the trap states in poly-Si channel.en_US
dc.language.isoen_USen_US
dc.titleHighly reliable liquid-phase deposited SiO2 with nitrous oxide plasma post-treatment for low temperature processed poly-Si TFT'sen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1109/IEDM.1998.746352en_US
dc.identifier.journalINTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGESTen_US
dc.citation.spage269en_US
dc.citation.epage272en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000078581800062-
Appears in Collections:Conferences Paper


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