Highly reliable liquid-phase deposited SiO2 with nitrous oxide plasma post-treatment for low temperature processed poly-Si TFT's

doi:10.1109/IEDM.1998.746352

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Yeh, CF	en_US
dc.contributor.author	Chen, DC	en_US
dc.contributor.author	Lu, CY	en_US
dc.contributor.author	Liu, C	en_US
dc.contributor.author	Lee, ST	en_US
dc.contributor.author	Liu, CH	en_US
dc.contributor.author	Chen, TJ	en_US
dc.date.accessioned	2014-12-08T15:27:13Z	-
dc.date.available	2014-12-08T15:27:13Z	-
dc.date.issued	1998	en_US
dc.identifier.isbn	0-7803-4774-9	en_US
dc.identifier.uri	http://hdl.handle.net/11536/19454	-
dc.identifier.uri	http://dx.doi.org/10.1109/IEDM.1998.746352	en_US
dc.description.abstract	Low temperature (similar to 300 degrees C) N2O plasma annealing for liquid-phase deposited (LPD) gate oxide has been proposed for the first time. Physicochemical and electrical characterizations show that the N2O-treated LPD-SiO2 improves breakdown field, interface state density, and Si-rich phenomenon. This novel technology has been also successfully applied to LTP poly-Si TFT's, which reveal excellent characteristics and reliability. It is believed that the N2O plasma post-treatment not only improves the oxide quality, but also passivates the trap states in poly-Si channel.	en_US
dc.language.iso	en_US	en_US
dc.title	Highly reliable liquid-phase deposited SiO2 with nitrous oxide plasma post-treatment for low temperature processed poly-Si TFT's	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1109/IEDM.1998.746352	en_US
dc.identifier.journal	INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST	en_US
dc.citation.spage	269	en_US
dc.citation.epage	272	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000078581800062	-
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