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dc.contributor.authorShu, CKen_US
dc.contributor.authorOu, Jen_US
dc.contributor.authorLin, HCen_US
dc.contributor.authorPan, YCen_US
dc.contributor.authorLee, WHen_US
dc.contributor.authorChen, WKen_US
dc.contributor.authorLee, MCen_US
dc.date.accessioned2014-12-08T15:27:16Z-
dc.date.available2014-12-08T15:27:16Z-
dc.date.issued1998en_US
dc.identifier.isbn4-274-90245-5en_US
dc.identifier.urihttp://hdl.handle.net/11536/19501-
dc.description.abstractThe isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition (MOCVD) was investigated by using Raman scattering, scanning electron microscopy (SEM), Hall, Xray and photoluminescence (PL) measurements. In our study, after incorporating small amounts of In atoms into GaN compound (less than 0.4%, thus no alloy), SEM pictures showed improved surface smoothness with greatly reduced nano-pits, which was also confirmed by the multiple interference effects in PL spectra. Doping of adequate quantity caused the reduction of yellow luminescence and unintentional background concentration, and the line width shrinkage in X-ray, PL and Raman data, and the enhanced mobility. The improved crystalline and optical qualities of GaN:In films may be attributed to the decrease in dislocation density that may be related to the "impurity softening" phenomena.en_US
dc.language.isoen_USen_US
dc.titleThe effects of isoelectronic in-doping in GaN films grown by MOCVDen_US
dc.typeProceedings Paperen_US
dc.identifier.journalBLUE LASER AND LIGHT EMITTING DIODES IIen_US
dc.citation.spage52en_US
dc.citation.epage55en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000079631200010-
Appears in Collections:Conferences Paper