標題: Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition
作者: Shu, CK
Ou, J
Lin, HC
Chen, WK
Lee, MC
電子物理學系
Department of Electrophysics
公開日期: 3-八月-1998
摘要: The isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition was investigated by using Raman scattering, scanning electron microscopy (SEM), and x-ray and photoluminescence (PL) measurements. In our study, the phonon spectra of films remain sharp without alloy formation after incorporation of small amounts of In atoms. The SEM pictures of the sample surface reveal greatly reduced nanopits indicating better surface flatness that is also supported by the multiple interference effect in the PL signals. More importantly, isoelectronic doping has caused the linewidth at 15 K of the near-band-edge emission of GaN to decrease sharply to 10 meV or less, reflecting improved optical property. (C) 1998 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.121933
http://hdl.handle.net/11536/32457
ISSN: 0003-6951
DOI: 10.1063/1.121933
期刊: APPLIED PHYSICS LETTERS
Volume: 73
Issue: 5
起始頁: 641
結束頁: 643
顯示於類別:期刊論文