1. You are Here：

Full metadata record
DC FieldValueLanguage
dc.contributor.authorShu, Gia-Weien_US
dc.contributor.authorTung, Chiun-Hsiangen_US
dc.contributor.authorTung, Shr-Changen_US
dc.contributor.authorSu, Po-Chenen_US
dc.contributor.authorShen, Ji-Linen_US
dc.contributor.authorYang, Min-Deen_US
dc.contributor.authorWu, Chih-Hungen_US
dc.contributor.authorChou, Wu-Chingen_US
dc.contributor.authorKo, Cheng-Haoen_US
dc.date.accessioned2014-12-08T15:27:16Z-
dc.date.available2014-12-08T15:27:16Z-
dc.date.issued2011-09-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.50.092302en_US
dc.identifier.urihttp://hdl.handle.net/11536/19503-
dc.description.abstractThe junction temperatures of the three individual subcells of InGaP/InGaAs/Ge solar cells were measured using photoluminescence (PL) with three different excitation lasers. With the illumination of an extra xenon-mercury lamp, the linear relationship between the PL energy and the illumination level is clearly observed and advantageously used for deriving the junction temperature. Using the Varshni relationship between the PL peak energy and the heat-sink temperature allows us to determine the junction temperature in each subcell. (C) 2011 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleMeasuring the Junction Temperature of GaInP/GaInAs/Ge Multijunction Solar Cells Using Photoluminescenceen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.50.092302en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume50en_US
dc.citation.issue9en_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000295029200023-
dc.citation.woscount1-
Appears in Collections:Articles


Files in This Item:

  1. 000295029200023.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.

Related Contents
Loading...