Measuring the Junction Temperature of GaInP/GaInAs/Ge Multijunction Solar Cells Using Photoluminescence

doi:10.1143/JJAP.50.092302

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DC 欄位	值	語言
dc.contributor.author	Shu, Gia-Wei	en_US
dc.contributor.author	Tung, Chiun-Hsiang	en_US
dc.contributor.author	Tung, Shr-Chang	en_US
dc.contributor.author	Su, Po-Chen	en_US
dc.contributor.author	Shen, Ji-Lin	en_US
dc.contributor.author	Yang, Min-De	en_US
dc.contributor.author	Wu, Chih-Hung	en_US
dc.contributor.author	Chou, Wu-Ching	en_US
dc.contributor.author	Ko, Cheng-Hao	en_US
dc.date.accessioned	2014-12-08T15:27:16Z	-
dc.date.available	2014-12-08T15:27:16Z	-
dc.date.issued	2011-09-01	en_US
dc.identifier.issn	0021-4922	en_US
dc.identifier.uri	http://dx.doi.org/10.1143/JJAP.50.092302	en_US
dc.identifier.uri	http://hdl.handle.net/11536/19503	-
dc.description.abstract	The junction temperatures of the three individual subcells of InGaP/InGaAs/Ge solar cells were measured using photoluminescence (PL) with three different excitation lasers. With the illumination of an extra xenon-mercury lamp, the linear relationship between the PL energy and the illumination level is clearly observed and advantageously used for deriving the junction temperature. Using the Varshni relationship between the PL peak energy and the heat-sink temperature allows us to determine the junction temperature in each subcell. (C) 2011 The Japan Society of Applied Physics	en_US
dc.language.iso	en_US	en_US
dc.title	Measuring the Junction Temperature of GaInP/GaInAs/Ge Multijunction Solar Cells Using Photoluminescence	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1143/JJAP.50.092302	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS	en_US
dc.citation.volume	50	en_US
dc.citation.issue	9	en_US
dc.citation.epage		en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000295029200023	-
dc.citation.woscount	1	-
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