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dc.contributor.authorCheng, KLen_US
dc.contributor.authorCheng, HCen_US
dc.contributor.authorLee, WHen_US
dc.contributor.authorLee, Cen_US
dc.contributor.authorYew, TRen_US
dc.date.accessioned2014-12-08T15:27:23Z-
dc.date.available2014-12-08T15:27:23Z-
dc.date.issued1997en_US
dc.identifier.isbn1-55899-376-2en_US
dc.identifier.issn0272-9172en_US
dc.identifier.urihttp://hdl.handle.net/11536/19643-
dc.description.abstractLow-temperature deposited highly-conductive SiC films has long been a goal for many researchers involved in hetero-junction bipolar transistor, thin-film transistor, solar cell...etc. Were in this paper, we study the influences of the diluted PH3 now rates on SiC film quality as well as electrical properties. PH+ was determined from residual gas analyzer to be the main dopant source. Phosphorous atoms will play a role of enhancing the SiC grain growth and resulting in a smaller film growth rate. Carrier concentrations increase monotonically with the diluted PH; now rates. While Hall mobility first increases than decreases with it due to a combination effect of the impurity scattering and a film quality improvement which dominates when the 1% PH3/H-2 flow rate is above or below 40 seem, respectively.en_US
dc.language.isoen_USen_US
dc.titleLow temperature deposited highly-conductive N-type SiC thin filmsen_US
dc.typeProceedings Paperen_US
dc.identifier.journalPOLYCRYSTALLINE THIN FILMS - STRUCTURE, TEXTURE, PROPERTIES AND APPLICATIONS IIIen_US
dc.citation.volume472en_US
dc.citation.spage463en_US
dc.citation.epage468en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000071462100071-
Appears in Collections:Conferences Paper