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dc.contributor.authorWang, THen_US
dc.contributor.authorChiang, LPen_US
dc.contributor.authorZous, NKen_US
dc.contributor.authorChang, TEen_US
dc.contributor.authorHuang, Cen_US
dc.date.accessioned2014-12-08T15:27:27Z-
dc.date.available2014-12-08T15:27:27Z-
dc.date.issued1997en_US
dc.identifier.isbn0-7803-4101-5en_US
dc.identifier.urihttp://hdl.handle.net/11536/19713-
dc.description.abstractA new oxide trap characterization technique by employing a two-phase subthreshold current measurement has been developed. By varing the gate bias and the drain bias in measurement, the field and temperature dependences of oxide charge detrapping and the spatial distributions of various stress induced oxide traps are characterized.en_US
dc.language.isoen_USen_US
dc.titleCharacterization of various stress-induced oxide traps in MOSFET's by using a novel transient current techniqueen_US
dc.typeProceedings Paperen_US
dc.identifier.journalINTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGESTen_US
dc.citation.spage89en_US
dc.citation.epage92en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000072059200019-
Appears in Collections:Conferences Paper


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