標題: AlGaN/GaN Multiple Quantum Wells Grown By Atomic Layer Deposition
作者: Lo, M. H.
Chen, S. W.
Li, Z. Y.
Lu, T. C.
Kuo, H. C.
Wang, S. C.
光電工程學系
Department of Photonics
公開日期: 2008
摘要: Three-pair AlGaN/GaN multiple quantum well structure with superlattice was grown using metal-organic chemical vapor deposition system. The AlGaN barrier and GaN well of the MQW were grown by atmoic layer deposition and conventional growth, respectively. (C) 2008 Optical Society of America
URI: http://hdl.handle.net/11536/1974
ISBN: 978-1-55752-859-9
期刊: 2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9
起始頁: 1059
結束頁: 1060
顯示於類別:會議論文