Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yih, CM | en_US |
| dc.contributor.author | Chung, SS | en_US |
| dc.contributor.author | Hsu, CCH | en_US |
| dc.date.accessioned | 2014-12-08T15:27:35Z | - |
| dc.date.available | 2014-12-08T15:27:35Z | - |
| dc.date.issued | 1996 | en_US |
| dc.identifier.isbn | 0-7803-2745-4 | en_US |
| dc.identifier.uri | http://hdl.handle.net/11536/19842 | - |
| dc.language.iso | en_US | en_US |
| dc.title | A numerical model for simulating MOSFET gate current degradation by considering the interface state generation | en_US |
| dc.type | Proceedings Paper | en_US |
| dc.identifier.journal | SISPAD '96 - 1996 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES | en_US |
| dc.citation.spage | 115 | en_US |
| dc.citation.epage | 116 | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.identifier.wosnumber | WOS:A1996BG48K00053 | - |
| Appears in Collections: | Conferences Paper | |
- A new approach to simulating n-MOSFET gate current degradation by including hot-electron induced oxide damage / Yih, CM;Cheng, SM;Chung, SS
- A new approach to simulating n-MOSFET gate current degradation by including hot-electron induced oxide damage / Yih, CM;Cheng, SM;Chung, SS
- A NEW GATE CURRENT SIMULATION TECHNIQUE CONSIDERING SI/SIO2 INTERFACE-TRAP GENERATION / WEN, KS;LI, HH;WU, CY
- EFFECTS OF HOT-CARRIER-INDUCED INTERFACE STATE GENERATION IN SUBMICRON LDD MOSFETS / WANG, TH;HUANG, CM;CHOU, PC;CHUNG, SSS;CHANG, TE
- A new approach for characterizing structure-dependent hot-carrier effects in drain-engineered MOSFET's / Chung, SS;Yang, JJ
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