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DC FieldValueLanguage
dc.contributor.authorWang, THen_US
dc.contributor.authorChang, TEen_US
dc.contributor.authorChiang, LPen_US
dc.contributor.authorHuang, CMen_US
dc.contributor.authorGuo, JCen_US
dc.date.accessioned2014-12-08T15:27:37Z-
dc.date.available2014-12-08T15:27:37Z-
dc.date.issued1996en_US
dc.identifier.isbn0-7803-3343-8en_US
dc.identifier.urihttp://hdl.handle.net/11536/19878-
dc.language.isoen_USen_US
dc.titleMechanisms and characteristics of oxide charge detrapping in n-MOSFET'sen_US
dc.typeProceedings Paperen_US
dc.identifier.journal1996 SYMPOSIUM ON VLSI TECHNOLOGY: DIGEST OF TECHNICAL PAPERSen_US
dc.citation.spage232en_US
dc.citation.epage233en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1996BF88S00094-
Appears in Collections:Conferences Paper


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