標題: High-performance pseudomorphic power HEMTs for low-voltage wireless communication applications
作者: Lai, YL
Chan, EY
Chang, CY
Liu, TH
Wang, SP
交大名義發表
電子工程學系及電子研究所
National Chiao Tung University
Department of Electronics Engineering and Institute of Electronics
公開日期: 1996
摘要: A high-performance pseudomorphic high electron mobility transistor (HEMT) with high output power density and high power-added efficiency for low-voltage wireless communication applications has been developed. This paper describes the de and microwave performance of the pseudomorphic AlGaAs/InGaAs HEMT developed. The 1 um gate-length HEMT exhibited a maximum drain current of 470 mA/mm at V-gs = +1.0 V. The maximum transconductance of the device was 280 mS/mm. At a drain bias of 3.0 V and a measurement frequency of 900 MHz, the 2mm-wide HEMT demonstrated an output power of 26.1 dBm ( a power density of 204 mW/mm) and a power-added efficiency of 65 % under the class AB condition while an output power of 26.7 dBm (234 mW/mm) and a power-added efficiency of 60 % were obtained under the class A condition. The developed pseudomorphic power HEMT developed achieves the highest output power density ever reported among the GaAs devices operating at 3.0 V.
URI: http://hdl.handle.net/11536/19895
ISBN: 0-7803-3388-8
期刊: ICSE '96 - 1996 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS
起始頁: 225
結束頁: 228
顯示於類別:會議論文