Investigation of high-power device and process for field emission display

標題:	Investigation of high-power device and process for field emission display
作者:	Yeh, CF Liu, JS Huang, CM 交大名義發表電子工程學系及電子研究所 National Chiao Tung University Department of Electronics Engineering and Institute of Electronics
公開日期:	1996
摘要:	A method of fabricating a semiconductor device including a high withstanding voltage lateral CMOS and a standard logic CMOS is developed for field emission display. Structure, process and simulation by TSUPREM and MEDICI will be discussed in this paper.
URI:	http://hdl.handle.net/11536/19906
ISBN:	0-7803-3594-5
期刊:	IVMC '96 - 9TH INTERNATIONAL VACUUM MICROELECTRONICS CONFERENCE, TECHNICAL DIGEST
起始頁:	628
結束頁:	630
顯示於類別：	會議論文