CVD Cu films deposited from Cu(hfac)TMVS

Abstract

Copper chemical vapor deposition from Cu(hfac)TMVS was studied using an LPCVD system of a cold wall vertical reactor. It was found that the resistivity of the chemically vapor deposited Cu films was dependent on the film's microstructure and impurity content, which in turn were dependent on the deposition conditions. At a deposition temperature of 180 degrees C and with H-2 as the carrier gas, copper films with low impurity content can be deposited with low flow rate of H-2 at low deposition pressure, while copper films with a compact microstructure can be deposited at a condition of low pressure which ensures high supersaturation of active reactants' molecules(1). It turns out that copper films with the optimal resistivity can be deposited at a temperature of 180 degrees C and a pressure of 300 mTorr using H-2 as the carrier gas.