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dc.contributor.authorChang, KMen_US
dc.contributor.authorTsai, JYen_US
dc.contributor.authorYeh, CBen_US
dc.contributor.authorYeh, THen_US
dc.contributor.authorWang, SWen_US
dc.contributor.authorJou, MJen_US
dc.date.accessioned2014-12-08T15:27:43Z-
dc.date.available2014-12-08T15:27:43Z-
dc.date.issued1995en_US
dc.identifier.urihttp://hdl.handle.net/11536/19963-
dc.language.isoen_USen_US
dc.titleReactive ion etching of compound semiconductors grown by MOCVD technique with BCl3/SF6/Ar mixturesen_US
dc.typeProceedings Paperen_US
dc.identifier.journalISIC-95 - 6TH INTERNATIONAL SYMPOSIUM ON IC TECHNOLOGY, SYSTEMS & APPLICATIONS, PROCEEDINGSen_US
dc.citation.spage194en_US
dc.citation.epage198en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1995BE63H00041-
Appears in Collections:Conferences Paper


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