Reactive ion etching of compound semiconductors grown by MOCVD technique with BCl3/SF6/Ar mixtures

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chang, KM	en_US
dc.contributor.author	Tsai, JY	en_US
dc.contributor.author	Yeh, CB	en_US
dc.contributor.author	Yeh, TH	en_US
dc.contributor.author	Wang, SW	en_US
dc.contributor.author	Jou, MJ	en_US
dc.date.accessioned	2014-12-08T15:27:43Z	-
dc.date.available	2014-12-08T15:27:43Z	-
dc.date.issued	1995	en_US
dc.identifier.uri	http://hdl.handle.net/11536/19963	-
dc.language.iso	en_US	en_US
dc.title	Reactive ion etching of compound semiconductors grown by MOCVD technique with BCl3/SF6/Ar mixtures	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	ISIC-95 - 6TH INTERNATIONAL SYMPOSIUM ON IC TECHNOLOGY, SYSTEMS & APPLICATIONS, PROCEEDINGS	en_US
dc.citation.spage	194	en_US
dc.citation.epage	198	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1995BE63H00041	-
顯示於類別：	會議論文