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DC FieldValueLanguage
dc.contributor.authorSun, SCen_US
dc.contributor.authorChen, CHen_US
dc.contributor.authorLou, JCen_US
dc.date.accessioned2014-12-08T15:27:44Z-
dc.date.available2014-12-08T15:27:44Z-
dc.date.issued1995en_US
dc.identifier.isbn7-5053-3285-6en_US
dc.identifier.urihttp://hdl.handle.net/11536/19999-
dc.language.isoen_USen_US
dc.titleMOS characteristics of N2O-grown and NO-annealed oxynitridesen_US
dc.typeProceedings Paperen_US
dc.identifier.journalPROCEEDINGS OF THE FOURTH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGYen_US
dc.citation.spageA90en_US
dc.citation.epageA92en_US
dc.contributor.department奈米中心zh_TW
dc.contributor.departmentNano Facility Centeren_US
dc.identifier.wosnumberWOS:A1995BF21N00022-
Appears in Collections:Conferences Paper


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