High quality interpoly-oxynitride grown by NH3 nitridation and N2O RTA treatment

標題:	High quality interpoly-oxynitride grown by NH3 nitridation and N2O RTA treatment
作者:	Pan, TM Lei, TF Yang, WL Cheng, CM Chao, TS 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	N2O;NH3;nitridation;oddation;oxynitride;RTA
公開日期:	1-二月-2001
摘要:	In this letter, a method to grow high quality interpolysilicon-oxynitride (interpoly-oxynitride) film is proposed. Samples, nitridized by NH3 with additional N2O annealing and CVD TEOS deposited on poly-oxynitride (poly-I) with RTA NaO oxidation, show excellent electrical properties in terms of very high electric breakdown field, ion; leakage current, high charge to breakdown, and low electron trapping rate. This novel film is a good candidate for an interpoly dielectric of future high density EEPROM and flash memory devices.
URI:	http://dx.doi.org/10.1109/55.902834 http://hdl.handle.net/11536/29883
ISSN:	0741-3106
DOI:	10.1109/55.902834
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	22
Issue:	2
起始頁:	68
結束頁:	70
顯示於類別：	期刊論文

文件中的檔案：

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。