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dc.contributor.authorPan, TMen_US
dc.contributor.authorLei, TFen_US
dc.contributor.authorYang, WLen_US
dc.contributor.authorCheng, CMen_US
dc.contributor.authorChao, TSen_US
dc.date.accessioned2014-12-08T15:44:15Z-
dc.date.available2014-12-08T15:44:15Z-
dc.date.issued2001-02-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/55.902834en_US
dc.identifier.urihttp://hdl.handle.net/11536/29883-
dc.description.abstractIn this letter, a method to grow high quality interpolysilicon-oxynitride (interpoly-oxynitride) film is proposed. Samples, nitridized by NH3 with additional N2O annealing and CVD TEOS deposited on poly-oxynitride (poly-I) with RTA NaO oxidation, show excellent electrical properties in terms of very high electric breakdown field, ion; leakage current, high charge to breakdown, and low electron trapping rate. This novel film is a good candidate for an interpoly dielectric of future high density EEPROM and flash memory devices.en_US
dc.language.isoen_USen_US
dc.subjectN2Oen_US
dc.subjectNH3en_US
dc.subjectnitridationen_US
dc.subjectoddationen_US
dc.subjectoxynitrideen_US
dc.subjectRTAen_US
dc.titleHigh quality interpoly-oxynitride grown by NH3 nitridation and N2O RTA treatmenten_US
dc.typeArticleen_US
dc.identifier.doi10.1109/55.902834en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume22en_US
dc.citation.issue2en_US
dc.citation.spage68en_US
dc.citation.epage70en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000167074000007-
dc.citation.woscount7-
Appears in Collections:Articles


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