標題: Process-related instability mechanisms for the hydrogenated amorphous silicon thin film transistors
作者: Tai, YH
Su, FC
Feng, MS
Cheng, HC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1995
URI: http://hdl.handle.net/11536/20001
ISBN: 7-5053-3285-6
期刊: PROCEEDINGS OF THE FOURTH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY
起始頁: A730
結束頁: A732
Appears in Collections:Conferences Paper