Accurate MOS device hot carrier models for VLSI reliability simulation

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DC Field	Value	Language
dc.contributor.author	CHUNG, SS	en_US
dc.contributor.author	YANG, JJ	en_US
dc.contributor.author	SU, JS	en_US
dc.date.accessioned	2014-12-08T15:27:45Z	-
dc.date.available	2014-12-08T15:27:45Z	-
dc.date.issued	1995	en_US
dc.identifier.isbn	0-7803-2585-0	en_US
dc.identifier.uri	http://hdl.handle.net/11536/20003	-
dc.identifier.uri	http://dx.doi.org/10.1109/CICC.1995.518175	en_US
dc.language.iso	en_US	en_US
dc.title	Accurate MOS device hot carrier models for VLSI reliability simulation	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1109/CICC.1995.518175	en_US
dc.identifier.journal	PROCEEDINGS OF THE IEEE 1995 CUSTOM INTEGRATED CIRCUITS CONFERENCE	en_US
dc.citation.spage	233	en_US
dc.citation.epage	236	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1995BD31E00051	-
Appears in Collections:	Conferences Paper

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