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dc.contributor.authorSU, HPen_US
dc.contributor.authorCHENG, HCen_US
dc.date.accessioned2014-12-08T15:03:28Z-
dc.date.available2014-12-08T15:03:28Z-
dc.date.issued1995-04-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.34.1816en_US
dc.identifier.urihttp://hdl.handle.net/11536/2003-
dc.description.abstractA never and simple method is proposed to produce high-performance nitrided oxides. Thin oxides nitrided only in NH3 at 900 degrees C for 1 h at 0.1 Torr have excellent interface stability, few electron traps, and excellent reliability. Although the nitrogen concentration [N] at the dielectric/Si substrate interface is kept at a low value, the hydrogen concentration [H] has been shown to be comparable to that of pure oxide at the beginning of the nitridation. Consequently, a high ratio of [N]/[K], which reflects the stable interface, can be attained at the initial stage of the very-low-pressure nitridation (VLPN). This is very different from the case of conventional low-pressure nitridation. The retarded formations of the interfacial Si3N4 and the surface nitrogen-rich oxynitrides are conjectured to be the main cause of reduction in the hydrogen content in the dielectrics during VLPN. Due to the simplicity and wide process window, VLPN is promising for the future ultra-large-scale-integration (ULSI) technology.en_US
dc.language.isoen_USen_US
dc.subjectNITRIDED OXIDESen_US
dc.subjectLOW-PRESSURE NITRIDATIONen_US
dc.subjectGATE DIELECTRICSen_US
dc.subjectINTERFACE STABILITYen_US
dc.subjectTIME-DEPENDENT DIELECTRIC BREAKDOWNen_US
dc.titleHIGH-PERFORMANCE NITRIDED OXIDES FABRICATED BY VERY-LOW-PRESSURE NITRIDATION TECHNIQUEen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.34.1816en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume34en_US
dc.citation.issue4Aen_US
dc.citation.spage1816en_US
dc.citation.epage1821en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1995RF66000019-
dc.citation.woscount1-
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