Direct observation of the lateral nonuniform channel doping profile in submicron MOSFET's from an anomalous charge pumping measurement results

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DC Field	Value	Language
dc.contributor.author	Chung, SS	en_US
dc.contributor.author	Cheng, SM	en_US
dc.contributor.author	Lee, GH	en_US
dc.contributor.author	Guo, JC	en_US
dc.date.accessioned	2014-12-08T15:27:48Z	-
dc.date.available	2014-12-08T15:27:48Z	-
dc.date.issued	1995	en_US
dc.identifier.isbn	0-7803-2602-4	en_US
dc.identifier.uri	http://hdl.handle.net/11536/20048	-
dc.identifier.uri	http://dx.doi.org/10.1109/VLSIT.1995.520878	en_US
dc.language.iso	en_US	en_US
dc.title	Direct observation of the lateral nonuniform channel doping profile in submicron MOSFET's from an anomalous charge pumping measurement results	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1109/VLSIT.1995.520878	en_US
dc.identifier.journal	1995 SYMPOSIUM ON VLSI TECHNOLOGY: DIGEST OF TECHNICAL PAPERS	en_US
dc.citation.spage	103	en_US
dc.citation.epage	104	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1995BE44J00052	-
Appears in Collections:	Conferences Paper

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