A new method for extracting the counter-implanted channel profile of enhancement-mode p-MOSFET's

Abstract

A new methodology is proposed to extract the nonuniform channel doping profile of enhancement mode p-MOSFET's with counter implantation, based on the relationship between device threshold voltage and substrate bias. A self-consistent mathematical analysis is developed to calculate the threshold voltage and the surface potential of counter-implanted long-channel p-MOSFET at the onset of heavy inversion, Comparisons between analytic calculation and two-dimensional (2-D) numerical analysis have been made and the accuracy of the developed analytic model has been verified, Based on the developed analytic model, an automated extraction technique has been successfully implemented to extract the channel doping profile. With the aid of a 2-D numerical simulator, the subthreshold current can be obtained by the extracted channel doping profile. Good agreements have been found with measured subthreshold characteristics for both long-and short-channel devices, This new extraction methodology can be used for precise process monitoring and device optimization purposes.