RECESSED-GATE ALGAAS/INGAAS/GAAS PSEUDORMORPHIC HEMT WITH SI-PLANAR-DOPED ETCH-STOP LAYER

Abstract

An improved slot etch technique based on an Si planar doped laver has been applied to gate recessing in the fabrication of AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors (HEMTs). The devices exhibited comparable g(m) with much better breakdown and leakage behaviour than conventional pseudomorphic HEMT devices.