| Title: | INTERFACE TRAP INDUCED THERMIONIC AND FIELD EMISSION CURRENT IN OFF-STATE MOSFETS |
| Authors: | WANG, TH CHANG, TE HUANG, CM 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
| Issue Date: | 1994 |
| URI: | http://hdl.handle.net/11536/20108 |
| ISBN: | 0-7803-2111-1 |
| Journal: | INTERNATIONAL ELECTRON DEVICES MEETING 1994 - IEDM TECHNICAL DIGEST |
| Begin Page: | 161 |
| End Page: | 164 |
| Appears in Collections: | Conferences Paper |
- 金氧半電晶體內界面缺陷所產生汲極漏電流的溫度效應 / 劉家瑋;Liu, Chia-Wei;汪大暉;Wang Tahui
- MECHANISMS OF INTERFACE TRAP-INDUCED DRAIN LEAKAGE CURRENT IN OFF-STATE N-MOSFETS / CHANG, TE;HUANG, CM;WANG, TH
- 利用暫態電流量測技術研究超大型積體電路元件中氧化層之可靠度 / 張澤恩;Chang, Tse-En;汪大暉;Tahui Wang
- A comprehensive study of hot carrier stress-induced drain leakage current degradation in thin-oxide n-MOSFET's / Wang, TH;Chiang, LP;Zous, NK;Hsu, CF;Huang, LY
- Voltage scaling and temperature effects on drain leakage current degradation in a hot carrier stressed n-MOSFET / Wang, TH;Hsu, CF;Chiang, LP;Zous, NK;Chao, TS
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