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dc.contributor.authorHuang, Jen-Hsienen_US
dc.contributor.authorLi, Kuang-Chiehen_US
dc.contributor.authorKekuda, Dhananjayen_US
dc.contributor.authorPadhy, Hari Haraen_US
dc.contributor.authorLin, Hong-Cheuen_US
dc.contributor.authorHo, Kuo-Chuanen_US
dc.contributor.authorChu, Chih-Weien_US
dc.date.accessioned2014-12-08T15:27:54Z-
dc.date.available2014-12-08T15:27:54Z-
dc.date.issued2010en_US
dc.identifier.issn0959-9428en_US
dc.identifier.urihttp://hdl.handle.net/11536/20178-
dc.identifier.urihttp://dx.doi.org/10.1039/b924147gen_US
dc.description.abstractWe have investigated the influence of thermal annealing on the performance of polymer bilayer solar cell devices incorporating poly{2,6-(4,4-bis[2-ethylhexyl]-4H-cyclopenta[2,1-b;3,4-b'] dithiophene)-alt-4,7-(2,1,3-benzothiadiazole)} (PCPDTTBT) as the donor and two kinds of fullerenes (C(60), C(70)) as acceptors. The higher absorption of C(70) increased the external quantum efficiency in the spectral range 400-600 nm. We observed morphological changes of the polymer films when the pre-annealing temperature was near the crystalline temperature (T(c), 207 degrees C). These nanostructural transformations resulted in a modified interfacial morphology of the donor phases and, therefore, greatly influenced the device performance. Post-annealing treatment reorganized the interface between the donor and acceptor phases, leading to better contact. The highest power conversion efficiency (2.85%) was obtained when we performed device pre- and post-annealing both at 200 degrees C for 30 min; the open-circuit voltage was 0.69 V and the short-circuit current was 8.42 mA cm(-2).en_US
dc.language.isoen_USen_US
dc.titleEfficient bilayer polymer solar cells possessing planar mixed-heterojunction structuresen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1039/b924147gen_US
dc.identifier.journalJOURNAL OF MATERIALS CHEMISTRYen_US
dc.citation.volume20en_US
dc.citation.issue16en_US
dc.citation.spage3295en_US
dc.citation.epage3300en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000276373500024-
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