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dc.contributor.authorLai, Chun-Fengen_US
dc.contributor.authorHuang, H. W.en_US
dc.contributor.authorLin, C. H.en_US
dc.contributor.authorKno, H. C.en_US
dc.contributor.authorLu, T. C.en_US
dc.contributor.authorWang, S. C.en_US
dc.contributor.authorChao, Chia-Hsinen_US
dc.date.accessioned2014-12-08T15:03:30Z-
dc.date.available2014-12-08T15:03:30Z-
dc.date.issued2008en_US
dc.identifier.isbn978-1-55752-859-9en_US
dc.identifier.urihttp://hdl.handle.net/11536/2019-
dc.description.abstractAn InGaN/GaN thin-film light-emitting diode with the photonic crystal (PhC) on the surface and a TiO(2)/SiO(2) omnidirectional reflector on the bottom was fabricated and found the line-width emission spectrum of 5 nm by the PhC. (C) 2007 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleEnhanced vertical extraction efficiency from a thin-film InGaN/GaN photonic crystal light-emitting diodesen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9en_US
dc.citation.spage2279en_US
dc.citation.epage2280en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000260498401130-
Appears in Collections:Conferences Paper


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