Enhanced vertical extraction efficiency from a thin-film InGaN/GaN photonic crystal light-emitting diodes

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lai, Chun-Feng	en_US
dc.contributor.author	Huang, H. W.	en_US
dc.contributor.author	Lin, C. H.	en_US
dc.contributor.author	Kno, H. C.	en_US
dc.contributor.author	Lu, T. C.	en_US
dc.contributor.author	Wang, S. C.	en_US
dc.contributor.author	Chao, Chia-Hsin	en_US
dc.date.accessioned	2014-12-08T15:03:30Z	-
dc.date.available	2014-12-08T15:03:30Z	-
dc.date.issued	2008	en_US
dc.identifier.isbn	978-1-55752-859-9	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2019	-
dc.description.abstract	An InGaN/GaN thin-film light-emitting diode with the photonic crystal (PhC) on the surface and a TiO(2)/SiO(2) omnidirectional reflector on the bottom was fabricated and found the line-width emission spectrum of 5 nm by the PhC. (C) 2007 Optical Society of America	en_US
dc.language.iso	en_US	en_US
dc.title	Enhanced vertical extraction efficiency from a thin-film InGaN/GaN photonic crystal light-emitting diodes	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9	en_US
dc.citation.spage	2279	en_US
dc.citation.epage	2280	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000260498401130	-
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