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DC FieldValueLanguage
dc.contributor.authorSUN, SCen_US
dc.contributor.authorCHANG, HYen_US
dc.date.accessioned2014-12-08T15:27:57Z-
dc.date.available2014-12-08T15:27:57Z-
dc.date.issued1993en_US
dc.identifier.isbn2-86332-135-8en_US
dc.identifier.urihttp://hdl.handle.net/11536/20220-
dc.language.isoen_USen_US
dc.titleTHERMAL-OXIDATION OF LIGHTLY-DOPED AND HEAVILY-DOPED SILICON IN PURE N2Oen_US
dc.typeProceedings Paperen_US
dc.identifier.journalESSDERC '93 - PROCEEDINGS OF THE 23RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCEen_US
dc.citation.spage403en_US
dc.citation.epage406en_US
dc.contributor.department奈米中心zh_TW
dc.contributor.departmentNano Facility Centeren_US
dc.identifier.wosnumberWOS:A1993BB18A00079-
Appears in Collections:Conferences Paper


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