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dc.contributor.authorWu, Shich-Chuanen_US
dc.contributor.authorYang, Yu-Linen_US
dc.contributor.authorHuang, Wen-Hsienen_US
dc.contributor.authorHuang, Yang-Tungen_US
dc.date.accessioned2014-12-08T15:27:58Z-
dc.date.available2014-12-08T15:27:58Z-
dc.date.issued2011-08-15en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3625263en_US
dc.identifier.urihttp://hdl.handle.net/11536/20234-
dc.description.abstractA three-dimensional copper photonic crystal was fabricated with the high compatibility process, damascene copper interconnections technique. The reflectance and transmittance spectra of this structure were measured with the Fourier-transform infrared spectroscopy and simulated with the 3 D finite-difference time-domain method. From the experiment data, it is shown that this structure exhibits a large photonic bandgap from mid-infrared regime to lambda = 1.95 mu m. At a heating temperature of 420 degrees C, it is observed that thermal emission is enhanced near the bandedge lambda = 1.71 mu m and suppressed in the bandgap region. This is attributed to the enhancement of photonic density of states near the bandedge. (C) 2011 American Institute of Physics. [doi:10.1063/1.3625263]en_US
dc.language.isoen_USen_US
dc.titleThermal emission at near-infrared wavelengths from three-dimensional copper photonic crystalsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3625263en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume110en_US
dc.citation.issue4en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000294484300177-
dc.citation.woscount3-
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