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dc.contributor.authorHuang, Jheng-Jieen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorYang, Jyun-Baoen_US
dc.contributor.authorChen, Shih-Chingen_US
dc.contributor.authorYang, Po-Chunen_US
dc.contributor.authorChen, Yu-Tingen_US
dc.contributor.authorTseng, Hsueh-Chihen_US
dc.contributor.authorSze, Simon M.en_US
dc.contributor.authorChu, Ann-Kuoen_US
dc.contributor.authorTsai, Ming-Jinnen_US
dc.date.accessioned2014-12-08T15:28:02Z-
dc.date.available2014-12-08T15:28:02Z-
dc.date.issued2012-10-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2012.2206365en_US
dc.identifier.urihttp://hdl.handle.net/11536/20306-
dc.description.abstractIn this letter, we fabricated resistance random access memory in a Pt/GaOx/TiN structure with a bipolar resistance switching characteristic and a bistable resistance ratio of about two orders by I-V sweeping. In order to increase the oxygen ion quantity in the gallium oxide layer, the proposed sample was sputtered in a mixed ambient of Ar and oxygen, and the resistance ratio was enhanced by 2.5 orders. In addition to the resistance ratio, set voltage distribution statistics show that the stability of gallium oxide sputtered in mixed Ar and oxygen gas was better than standard Ar-only sample.en_US
dc.language.isoen_USen_US
dc.subjectGallium oxideen_US
dc.subjectnonvolatile resistance switching memoryen_US
dc.subjectresistance random access memory (RRAM)en_US
dc.titleInfluence of Oxygen Concentration on Resistance Switching Characteristics of Gallium Oxideen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2012.2206365en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume33en_US
dc.citation.issue10en_US
dc.citation.spage1387en_US
dc.citation.epage1389en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000309364600018-
dc.citation.woscount7-
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