完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lin, Sheng-Di | en_US |
dc.contributor.author | Fu, Ying-Jhe | en_US |
dc.contributor.author | Cheng, Chun | en_US |
dc.date.accessioned | 2014-12-08T15:28:03Z | - |
dc.date.available | 2014-12-08T15:28:03Z | - |
dc.date.issued | 2012-08-27 | en_US |
dc.identifier.issn | 1094-4087 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1364/OE.20.019850 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/20324 | - |
dc.description.abstract | We present the observation and analysis of long-lived exciton in individual InAs quantum dots (QDs). The general model considering the interplay between dark and bright states reveals the two key factors responsible for the long decay time: the shortened spin-flip time at elevated temperature and the imbalanced initial populations between the dark and bright states. The later one plays a key role in the unusual phenomena and leads to the possibility of spin-dependent relaxation process in QDs. (C) 2012 Optical Society of America | en_US |
dc.language.iso | en_US | en_US |
dc.title | Imbalanced initial populations between dark and bright states in semiconductor quantum dots | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1364/OE.20.019850 | en_US |
dc.identifier.journal | OPTICS EXPRESS | en_US |
dc.citation.volume | 20 | en_US |
dc.citation.issue | 18 | en_US |
dc.citation.spage | 19850 | en_US |
dc.citation.epage | 19858 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000308414800025 | - |
dc.citation.woscount | 1 | - |
顯示於類別: | 期刊論文 |