LATERAL TITANIUM SILICIDE GROWTH AND ITS SUPPRESSION USING THE A-SI/TI BILAYER STRUCTURE

doi:10.1016/0038-1101(94)00162-9

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	LOU, YS	en_US
dc.contributor.author	WU, CY	en_US
dc.date.accessioned	2014-12-08T15:03:30Z	-
dc.date.available	2014-12-08T15:03:30Z	-
dc.date.issued	1995-03-01	en_US
dc.identifier.issn	0038-1101	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/0038-1101(94)00162-9	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2033	-
dc.description.abstract	The effects of internal oxygen impurities released from the TiSiO2 reaction on the lateral silicide growth using the a-Si/Ti bilayer structure are presented. The lateral silicide growth can be effectively retarded by internal oxygen impurities using a-Si/Ti bilayer process after silicidation at a temperature below 700 degrees C. Compared with the simultaneously processed single Ti layer process, it is observed that both high-level oxygen impurities and their redistribution in the possible Si-diffusion paths play the same important role on the suppression of the lateral silicide growth. Finally, the oxygen redistribution-dependent kinetics is developed to give a self-consistent explanation fo; the experimental observations from both the single Ti layer process and the a-Si/Ti bilayer process.	en_US
dc.language.iso	en_US	en_US
dc.title	LATERAL TITANIUM SILICIDE GROWTH AND ITS SUPPRESSION USING THE A-SI/TI BILAYER STRUCTURE	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/0038-1101(94)00162-9	en_US
dc.identifier.journal	SOLID-STATE ELECTRONICS	en_US
dc.citation.volume	38	en_US
dc.citation.issue	3	en_US
dc.citation.spage	715	en_US
dc.citation.epage	720	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1995QK01500025	-
dc.citation.woscount	1	-
顯示於類別：	期刊論文

文件中的檔案：

A1995QK01500025.pdf

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。