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dc.contributor.authorChang, Cho-Weien_US
dc.contributor.authorChen, Chien-Yuen_US
dc.contributor.authorChang, Tien-Lien_US
dc.contributor.authorTing, Chia-Jenen_US
dc.contributor.authorWang, Chien-Pingen_US
dc.contributor.authorChou, Chang-Pinen_US
dc.date.accessioned2014-12-08T15:28:11Z-
dc.date.available2014-12-08T15:28:11Z-
dc.date.issued2012-11-01en_US
dc.identifier.issn0947-8396en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s00339-012-7048-6en_US
dc.identifier.urihttp://hdl.handle.net/11536/20401-
dc.description.abstractThis study presents an alternative method for micron-resolution patterning of a sapphire surface utilizing the characteristic of an ultra-short pulse (10(-15) s) from ytterbium (Yb) femtosecond laser (FS-laser) irradiation. Conventional processes often involve several steps, such as wet chemical or dry etching, for surface structuring of sapphire. In this study, two-dimensional array patterns on the sapphire surface with an area of 5x5 mm(2) and a depth of 1.2 +/- 0.1 mu m can be directly and easily fabricated by a single step of the FS-laser process, which involves 350-fs laser pulses with a wavelength of 517 nm at a repetition rate of 100 kHz. The measured ablation depths on the sapphire surface display that the proposed process can be under well-controlled conditions. Based on the design changes for being quickly implemented in the micromachining process, a FS laser can be a promising and competitive tool for patterning sapphire with an acceptable quality for industrial usage.en_US
dc.language.isoen_USen_US
dc.titleSapphire surface patterning using femtosecond laser micromachiningen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s00339-012-7048-6en_US
dc.identifier.journalAPPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSINGen_US
dc.citation.volume109en_US
dc.citation.issue2en_US
dc.citation.spage441en_US
dc.citation.epage448en_US
dc.contributor.department機械工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Mechanical Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000310240900028-
dc.citation.woscount5-
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