Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Li, Yiming | en_US |
dc.contributor.author | Lee, Jam-Wem | en_US |
dc.contributor.author | Chou, Hung-Mu | en_US |
dc.date.accessioned | 2014-12-08T15:28:22Z | - |
dc.date.available | 2014-12-08T15:28:22Z | - |
dc.date.issued | 2004-10-01 | en_US |
dc.identifier.issn | 1569-8025 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1007/s10825-004-7056-7 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/20513 | - |
dc.description.abstract | In this paper we numerically examine the electrical characteristics of surrounding-gate strained silicon nanowire field effect transistors (FETs) by changing the radius (RSiGe) of silicon-germanium (SiGe) wire. Due to the higher electron mobility, the n-type FETs with strained silicon channel films do enhance driving capability (similar to 8% increment on the drain current) in comparison with the pure Si one. The leakage current and transfer characteristics, the threshold-voltage (V-t), the drain induced barrier height lowering (DIBL), and the gate capacitance (C-G) are estimated with respect to different gate length (L-G), gate bias (V-G), and R-SiGe. For short channel effects, such as V-t roll-off and DIBL, the surrounding-gate strained silicon nanowire FET sustains similar characteristics with the pure Si one. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | strained silicon | en_US |
dc.subject | nanowire FET | en_US |
dc.subject | surrounding-gate | en_US |
dc.subject | drain induced barrier height lowering | en_US |
dc.subject | threshold-voltage roll-off | en_US |
dc.subject | gate capacitance | en_US |
dc.subject | simulation | en_US |
dc.title | Silicon-Germanium Structure in Surrounding-Gate Strained Silicon Nanowire Field Effect Transistors | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1007/s10825-004-7056-7 | en_US |
dc.identifier.journal | JOURNAL OF COMPUTATIONAL ELECTRONICS | en_US |
dc.citation.volume | 3 | en_US |
dc.citation.issue | 3-4 | en_US |
dc.citation.spage | 251 | en_US |
dc.citation.epage | 255 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 友訊交大聯合研發中心 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | D Link NCTU Joint Res Ctr | en_US |
dc.identifier.wosnumber | WOS:000208478600023 | - |
dc.citation.woscount | 4 | - |
Appears in Collections: | Articles |
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