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dc.contributor.authorLi, Yimingen_US
dc.contributor.authorLu, Hsiao-Meien_US
dc.date.accessioned2014-12-08T15:28:22Z-
dc.date.available2014-12-08T15:28:22Z-
dc.date.issued2003-12-01en_US
dc.identifier.issn1569-8025en_US
dc.identifier.urihttp://dx.doi.org/10.1023/B:JCEL.0000011476.26741.a3en_US
dc.identifier.urihttp://hdl.handle.net/11536/20515-
dc.description.abstractIn this paper, we study the impact of the sizes and the shapes of nanoscale semiconductor quantum rings on the electron and hole energy states. A three-dimensional effective one band Schrodinger equation is solved numerically for semiconductor quantum rings with disk, cut-bottom-elliptical, and conical shapes. For small InAs/GaAs quantum rings we have found a sufficient difference in the ground state and excited state (l = -1) electron energies for rings with the same volume but different shapes. Volume dependence of the electron and hole energies can vary over a wide range and depends significantly on the ring shapes. It is found that a non-periodical oscillation of the energy band gap between the lowest electron and hole states as a function of external magnetic fields.en_US
dc.language.isoen_USen_US
dc.subjectnanoscale quantum ringen_US
dc.subjectInAs/GaAsen_US
dc.subjectenergy spectraen_US
dc.subjectgeometry and magnetic field effectsen_US
dc.subjectcomputer simulationen_US
dc.titleEffect of Shape and Size on Electron Transition Energies for Nanoscale InAs/GaAs Quantum Ringsen_US
dc.typeArticleen_US
dc.identifier.doi10.1023/B:JCEL.0000011476.26741.a3en_US
dc.identifier.journalJOURNAL OF COMPUTATIONAL ELECTRONICSen_US
dc.citation.volume2en_US
dc.citation.issue2-4en_US
dc.citation.spage487en_US
dc.citation.epage490en_US
dc.contributor.department友訊交大聯合研發中心zh_TW
dc.contributor.departmentD Link NCTU Joint Res Ctren_US
dc.identifier.wosnumberWOS:000208478700076-
dc.citation.woscount0-
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