A Quantum Correction Model for Nanoscale Double-Gate MOS Devices Under Inversion Conditions

Abstract

A quantum correction model for nanoscale double-gate MOSFETs under inversion conditions is proposed. Based on the solution of Schrodinger-Poisson equations, the developed quantum correction model is optimized with respect to (i) the left and right positions of the charge concentration peak, (ii) the maximum of the charge concentration, (iii) the total inversion charge sheet density, and (iv) the average inversion charge depth, respectively. This model can predict inversion layer electron density for various oxide thicknesses, silicon film thicknesses, and applied voltages. Compared to the Schrodinger-Poisson results, our model prediction is within 3.0% of accuracy. This quantum correction model has continuous derivatives and is therefore amenable to a device simulator.